国家/地区 韩国（651） 世界知识产权组织（3）
IPC部 C（651） H（32） B（5）
F（3）
IPC大类 C01（651） H01（32） C23（9）
B05（5） F16（3）
IPC小类 C01B（651） H01L（32） C23C（9）
B05D（4） B05B（3） F16K（3）
IPC C01B031/04（651）
发明人 LEE Y T（651）
公开年 2016（646） 2015（5）
申请年 2015（586）  2016（36）  2014（29） 
专利权人 LEE Y T（651）

Transistor useful as graphene single-electron transistor and electron tunneling graphene transistor for on/off electricity of electronic device i.e. central processing unit and memory, comprises e.g. a source electrode and a drain electrode.

LEE Y T

Transistor useful as graphene single-electron transistor and electron tunneling graphene transistor for on/off electricity of electronic device i.e. central processing unit and memory, comprises e.g. a source electrode and a drain electrode.

LEE Y T

Transistor for controlling on/off of electricity, comprises source electrode, drain electrode, and graphene connected to source electrode.

LEE Y T

Electron tunneling graphene transistor has crossed obstacle regulating circuit that is equipped with lower portion of piezo material.

LEE Y T

Transistor has crossed obstacle regulating circuit that is equipped in lower portion of Piezo material, and drain electrode to control height of Fermi level of graphene so that on/off of electricity is controlled.

LEE Y T

Manufacturing graphene atomic layer used for manufacturing electronic component, involves etching graphene and irradiating graphene with energy source, where graphene is equipped with one or more layers.

LEE Y T

Producing graphene atomic layer etched graphene, comprises providing self-assembled monolayer mask on surface the graphene having at least one layer, and irradiating energy sources on the graphene for etching.

LEE Y T

Manufacture of graphene used for manufacturing electronic component, involves providing self-assembled monolayer mask on graphene atomic layer, and etching graphene atomic layer by irradiating energy source.

LEE Y T

Transistor useful as graphene single-electron transistor and graphene electron tunneling transistor to adjust on/off electricity in central processing unit, memory and battery, comprises e.g. source electrode, drain electrode and graphene.

LEE Y T

Transistor e.g. graphene single electron transistor, has crossed obstacle regulating circuit of graphene set in lower portion of Piezo material set in lower portion of graphene and in etched position of insulating material layer.

LEE Y T